BUK7K15-80E. Аналоги и основные параметры
Наименование производителя: BUK7K15-80E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 68 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12.6 ns
Cossⓘ - Выходная емкость: 194 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: SOT1205
Аналог (замена) для BUK7K15-80E
- подборⓘ MOSFET транзистора по параметрам
BUK7K15-80E даташит
buk7k15-80e.pdf
BUK7K15-80E Dual N-channel 80 V, 15 m standard level MOSFET 11 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC
buk7k134-100e.pdf
BUK7K134-100E Dual N-channel 100 V, 121 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
buk7k17-80e.pdf
BUK7K17-80E Dual N-channel 80 V, 17 m standard level MOSFET 10 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC
buk7k12-60e.pdf
BUK7K12-60E Dual N-channel 60 V, 9.3 m standard level MOSFET 11 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
Другие IGBT... BUK6D56-60E, BUK6D72-30E, BUK6D77-60E, BUK6D81-80E, BUK7D25-40E, BUK7J1R0-40H, BUK7J1R4-40H, BUK7K134-100E, TK10A60D, BUK7K17-80E, BUK7K23-80E, BUK7K29-100E, BUK7K32-100E, BUK7K45-100E, BUK7K89-100E, BUK7M10-40E, BUK7M11-40H
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