BUK7K29-100E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7K29-100E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 68 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 29.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 13.3 nS
Cossⓘ - Capacitancia de salida: 181 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0245 Ohm
Encapsulados: SOT1205
Búsqueda de reemplazo de BUK7K29-100E MOSFET
- Selecciónⓘ de transistores por parámetros
BUK7K29-100E datasheet
..1. Size:712K nxp
buk7k29-100e.pdf 
BUK7K29-100E Dual N-channel 100 V, 24.5 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
8.1. Size:264K nxp
buk7k23-80e.pdf
BUK7K23-80E Dual N-channel 80 V, 23 m standard level MOSFET 11 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC
8.2. Size:286K nxp
buk7k25-40e.pdf
BUK7K25-40E Dual N-channel TrenchMOS standard level FET 23 April 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche r
9.1. Size:713K nxp
buk7k134-100e.pdf
BUK7K134-100E Dual N-channel 100 V, 121 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
9.2. Size:255K nxp
buk7k17-80e.pdf
BUK7K17-80E Dual N-channel 80 V, 17 m standard level MOSFET 10 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC
9.3. Size:253K nxp
buk7k15-80e.pdf
BUK7K15-80E Dual N-channel 80 V, 15 m standard level MOSFET 11 May 2018 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET AEC
9.4. Size:325K nxp
buk7k12-60e.pdf
BUK7K12-60E Dual N-channel 60 V, 9.3 m standard level MOSFET 11 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
9.5. Size:716K nxp
buk7k45-100e.pdf
BUK7K45-100E Dual N-channel 100 V, 37.6 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
9.6. Size:304K nxp
buk7k5r6-30e.pdf
BUK7K5R6-30E Dual N-channel 30 V, 5.6 m standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
9.7. Size:296K nxp
buk7k5r1-30e.pdf
BUK7K5R1-30E Dual N-channel 30 V, 5.1 m standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
9.9. Size:294K nxp
buk7k6r8-40e.pdf
BUK7K6R8-40E Dual N-channel 40 V, 6.8 m standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
9.11. Size:712K nxp
buk7k32-100e.pdf
BUK7K32-100E Dual N-channel 100 V, 27.5 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
9.12. Size:336K nxp
buk7k6r2-40e.pdf
BUK7K6R2-40E Dual N-channel 40 V, 5.8 m standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
9.13. Size:336K nxp
buk7k8r7-40e.pdf
BUK7K8R7-40E Dual N-channel 40 V, 8.5 m standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
9.15. Size:716K nxp
buk7k89-100e.pdf
BUK7K89-100E Dual N-channel 100 V, 82.5 m standard level MOSFET 2 September 2015 Product data sheet 1. General description Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Dual MOSFET
Otros transistores... BUK6D81-80E, BUK7D25-40E, BUK7J1R0-40H, BUK7J1R4-40H, BUK7K134-100E, BUK7K15-80E, BUK7K17-80E, BUK7K23-80E, 4N60, BUK7K32-100E, BUK7K45-100E, BUK7K89-100E, BUK7M10-40E, BUK7M11-40H, BUK7M12-40E, BUK7M12-60E, BUK7M15-40H
