BUK7K29-100E
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BUK7K29-100E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 68
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 29.5
A
Tjⓘ - Максимальная температура канала: 175
°C
trⓘ -
Время нарастания: 13.3
ns
Cossⓘ - Выходная емкость: 181
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0245
Ohm
Тип корпуса:
SOT1205
- подбор MOSFET транзистора по параметрам
BUK7K29-100E
Datasheet (PDF)
..1. Size:712K nxp
buk7k29-100e.pdf 

BUK7K29-100EDual N-channel 100 V, 24.5 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
8.1. Size:264K nxp
buk7k23-80e.pdf 

BUK7K23-80EDual N-channel 80 V, 23 m standard level MOSFET11 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC
8.2. Size:286K nxp
buk7k25-40e.pdf 

BUK7K25-40EDual N-channel TrenchMOS standard level FET23 April 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive avalanche r
9.1. Size:713K nxp
buk7k134-100e.pdf 

BUK7K134-100EDual N-channel 100 V, 121 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.2. Size:255K nxp
buk7k17-80e.pdf 

BUK7K17-80EDual N-channel 80 V, 17 m standard level MOSFET10 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC
9.3. Size:253K nxp
buk7k15-80e.pdf 

BUK7K15-80EDual N-channel 80 V, 15 m standard level MOSFET11 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC
9.4. Size:325K nxp
buk7k12-60e.pdf 

BUK7K12-60EDual N-channel 60 V, 9.3 m standard level MOSFET11 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.5. Size:716K nxp
buk7k45-100e.pdf 

BUK7K45-100EDual N-channel 100 V, 37.6 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.6. Size:304K nxp
buk7k5r6-30e.pdf 

BUK7K5R6-30EDual N-channel 30 V, 5.6 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.7. Size:296K nxp
buk7k5r1-30e.pdf 

BUK7K5R1-30EDual N-channel 30 V, 5.1 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.8. Size:301K nxp
buk7k52-60e.pdf 

BUK7K52-60EDual N-channel 60 V, 45 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.9. Size:294K nxp
buk7k6r8-40e.pdf 

BUK7K6R8-40EDual N-channel 40 V, 6.8 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.10. Size:308K nxp
buk7k18-40e.pdf 

BUK7K18-40EDual N-channel 40 V, 19 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.11. Size:712K nxp
buk7k32-100e.pdf 

BUK7K32-100EDual N-channel 100 V, 27.5 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.12. Size:336K nxp
buk7k6r2-40e.pdf 

BUK7K6R2-40EDual N-channel 40 V, 5.8 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.13. Size:336K nxp
buk7k8r7-40e.pdf 

BUK7K8R7-40EDual N-channel 40 V, 8.5 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.14. Size:336K nxp
buk7k17-60e.pdf 

BUK7K17-60EDual N-channel 60 V, 14 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.15. Size:716K nxp
buk7k89-100e.pdf 

BUK7K89-100EDual N-channel 100 V, 82.5 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
9.16. Size:311K nxp
buk7k35-60e.pdf 

BUK7K35-60EDual N-channel 60 V, 30 m standard level MOSFET15 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
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.
History: CED02N6A
| CEB83A3G
| BUK761R8-30C
| CEB95P04
| SVG076R5NSTR
| CEF02N7G
| HUF75637P3