BUK7M17-80E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7M17-80E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 79 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 43 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.4 nS
Cossⓘ - Capacitancia de salida: 161 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
Paquete / Cubierta: SOT1210
Búsqueda de reemplazo de BUK7M17-80E MOSFET
BUK7M17-80E Datasheet (PDF)
buk7m17-80e.pdf

BUK7M17-80EN-channel 80 V, 17 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R
buk7m15-40h.pdf

BUK7M15-40HN-channel 40 V, 15.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut
buk7m15-60e.pdf

BUK7M15-60EN-channel 60 V, 15 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R
buk7m11-40h.pdf

BUK7M11-40HN-channel 40 V, 11.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut
Otros transistores... BUK7K45-100E , BUK7K89-100E , BUK7M10-40E , BUK7M11-40H , BUK7M12-40E , BUK7M12-60E , BUK7M15-40H , BUK7M15-60E , 2N60 , BUK7M19-60E , BUK7M20-40H , BUK7M21-40E , BUK7M22-80E , BUK7M27-80E , BUK7M33-60E , BUK7M3R3-40H , BUK7M42-60E .
History: 2SK3096 | 2SK3767 | MDU1401SVRH | SDF460JEA
History: 2SK3096 | 2SK3767 | MDU1401SVRH | SDF460JEA



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