All MOSFET. BUK7M17-80E Datasheet

 

BUK7M17-80E MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUK7M17-80E
   Marking Code: 71780E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 29.6 nC
   trⓘ - Rise Time: 9.4 nS
   Cossⓘ - Output Capacitance: 161 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOT1210

 BUK7M17-80E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUK7M17-80E Datasheet (PDF)

 ..1. Size:722K  nxp
buk7m17-80e.pdf

BUK7M17-80E
BUK7M17-80E

BUK7M17-80EN-channel 80 V, 17 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 8.1. Size:281K  nxp
buk7m15-40h.pdf

BUK7M17-80E
BUK7M17-80E

BUK7M15-40HN-channel 40 V, 15.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut

 8.2. Size:717K  nxp
buk7m15-60e.pdf

BUK7M17-80E
BUK7M17-80E

BUK7M15-60EN-channel 60 V, 15 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 8.3. Size:278K  nxp
buk7m11-40h.pdf

BUK7M17-80E
BUK7M17-80E

BUK7M11-40HN-channel 40 V, 11.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut

 8.4. Size:724K  nxp
buk7m19-60e.pdf

BUK7M17-80E
BUK7M17-80E

BUK7M19-60EN-channel 60 V, 19 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 8.5. Size:722K  nxp
buk7m10-40e.pdf

BUK7M17-80E
BUK7M17-80E

BUK7M10-40EN-channel 40 V, 10 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 8.6. Size:726K  nxp
buk7m12-40e.pdf

BUK7M17-80E
BUK7M17-80E

BUK7M12-40EN-channel 40 V, 12 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 8.7. Size:716K  nxp
buk7m12-60e.pdf

BUK7M17-80E
BUK7M17-80E

BUK7M12-60EN-channel 60 V, 12 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

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History: IPD50R280CE

 

 
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