BUK7M19-60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7M19-60E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 55 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.4 nS
Cossⓘ - Capacitancia de salida: 117 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
Encapsulados: SOT1210
Búsqueda de reemplazo de BUK7M19-60E MOSFET
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BUK7M19-60E datasheet
buk7m19-60e.pdf
BUK7M19-60E N-channel 60 V, 19 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R
buk7m15-40h.pdf
BUK7M15-40H N-channel 40 V, 15.0 m standard level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully aut
buk7m15-60e.pdf
BUK7M15-60E N-channel 60 V, 15 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R
buk7m11-40h.pdf
BUK7M11-40H N-channel 40 V, 11.0 m standard level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully aut
Otros transistores... BUK7K89-100E, BUK7M10-40E, BUK7M11-40H, BUK7M12-40E, BUK7M12-60E, BUK7M15-40H, BUK7M15-60E, BUK7M17-80E, IRF520, BUK7M20-40H, BUK7M21-40E, BUK7M22-80E, BUK7M27-80E, BUK7M33-60E, BUK7M3R3-40H, BUK7M42-60E, BUK7M45-40E
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