All MOSFET. BUK7M19-60E Datasheet

 

BUK7M19-60E Datasheet and Replacement


   Type Designator: BUK7M19-60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 5.4 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: SOT1210
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BUK7M19-60E Datasheet (PDF)

 ..1. Size:724K  nxp
 buk7m19-60e.pdf pdf_icon

BUK7M19-60E

BUK7M19-60EN-channel 60 V, 19 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 8.1. Size:281K  nxp
 buk7m15-40h.pdf pdf_icon

BUK7M19-60E

BUK7M15-40HN-channel 40 V, 15.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut

 8.2. Size:717K  nxp
 buk7m15-60e.pdf pdf_icon

BUK7M19-60E

BUK7M15-60EN-channel 60 V, 15 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R

 8.3. Size:278K  nxp
 buk7m11-40h.pdf pdf_icon

BUK7M19-60E

BUK7M11-40HN-channel 40 V, 11.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFHS9351 | DMNH10H028SCT | WML11N80M3 | CHM61A3PAGP | BL20N60-F | NTJD4152P | IRLS4030

Keywords - BUK7M19-60E MOSFET datasheet

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