BUK7M19-60E MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7M19-60E
Marking Code: 71960E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 17.3 nC
trⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 117 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SOT1210
BUK7M19-60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7M19-60E Datasheet (PDF)
buk7m19-60e.pdf
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buk7m15-60e.pdf
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BUK7M10-40EN-channel 40 V, 10 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R
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BUK7M12-40EN-channel 40 V, 12 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R
buk7m12-60e.pdf
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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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