BUK7M19-60E Specs and Replacement
Type Designator: BUK7M19-60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 117 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SOT1210
BUK7M19-60E substitution
- MOSFET ⓘ Cross-Reference Search
BUK7M19-60E datasheet
buk7m19-60e.pdf
BUK7M19-60E N-channel 60 V, 19 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R... See More ⇒
buk7m15-40h.pdf
BUK7M15-40H N-channel 40 V, 15.0 m standard level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully aut... See More ⇒
buk7m15-60e.pdf
BUK7M15-60E N-channel 60 V, 15 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R... See More ⇒
buk7m11-40h.pdf
BUK7M11-40H N-channel 40 V, 11.0 m standard level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully aut... See More ⇒
Detailed specifications: BUK7K89-100E, BUK7M10-40E, BUK7M11-40H, BUK7M12-40E, BUK7M12-60E, BUK7M15-40H, BUK7M15-60E, BUK7M17-80E, IRF520, BUK7M20-40H, BUK7M21-40E, BUK7M22-80E, BUK7M27-80E, BUK7M33-60E, BUK7M3R3-40H, BUK7M42-60E, BUK7M45-40E
Keywords - BUK7M19-60E MOSFET specs
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