BUK7M27-80E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK7M27-80E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.6 nS
Cossⓘ - Capacitancia de salida: 109 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
Paquete / Cubierta: SOT1210
- Selección de transistores por parámetros
BUK7M27-80E Datasheet (PDF)
buk7m27-80e.pdf

BUK7M27-80EN-channel 80 V, 27 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R
buk7m20-40h.pdf

BUK7M20-40HN-channel 40 V, 20.0 m standard level MOSFET in LFPAK3329 January 2019 Product data sheet1. General descriptionAutomotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in highperformance automotive applications.2. Features and benefits Fully aut
buk7m21-40e.pdf

BUK7M21-40EN-channel 40 V, 21 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R
buk7m22-80e.pdf

BUK7M22-80EN-channel 80 V, 22 m standard level MOSFET in LFPAK3319 September 2016 Product data sheet1. General descriptionStandard level N-channel MOSFET in an LFPAK33 (Power33) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.2. Features and benefits Q101 Compliant R
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: P5102FMNV | AOB418 | NCE65T1K2K | SSF3018D | IRFS131 | WVM13N50 | FDS6912A
History: P5102FMNV | AOB418 | NCE65T1K2K | SSF3018D | IRFS131 | WVM13N50 | FDS6912A



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