BUK7M27-80E. Аналоги и основные параметры
Наименование производителя: BUK7M27-80E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 62 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8.6 ns
Cossⓘ - Выходная емкость: 109 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm
Тип корпуса: SOT1210
Аналог (замена) для BUK7M27-80E
- подборⓘ MOSFET транзистора по параметрам
BUK7M27-80E даташит
buk7m27-80e.pdf
BUK7M27-80E N-channel 80 V, 27 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R
buk7m20-40h.pdf
BUK7M20-40H N-channel 40 V, 20.0 m standard level MOSFET in LFPAK33 29 January 2019 Product data sheet 1. General description Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits Fully aut
buk7m21-40e.pdf
BUK7M21-40E N-channel 40 V, 21 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R
buk7m22-80e.pdf
BUK7M22-80E N-channel 80 V, 22 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant R
Другие IGBT... BUK7M12-60E, BUK7M15-40H, BUK7M15-60E, BUK7M17-80E, BUK7M19-60E, BUK7M20-40H, BUK7M21-40E, BUK7M22-80E, 2N60, BUK7M33-60E, BUK7M3R3-40H, BUK7M42-60E, BUK7M45-40E, BUK7M4R3-40H, BUK7M5R0-40H, BUK7M67-60E, BUK7M6R0-40H
History: BUK7M33-60E
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