BUK9Y2R4-40H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUK9Y2R4-40H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 163 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26.3 nS
Cossⓘ - Capacitancia de salida: 859 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
Paquete / Cubierta: SOT669
Búsqueda de reemplazo de BUK9Y2R4-40H MOSFET
BUK9Y2R4-40H Datasheet (PDF)
buk9y2r4-40h.pdf

BUK9Y2R4-40HN-channel 40 V, 2.4 m logic level MOSFET in LFPAK564 June 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Featur
buk9y2r8-40h.pdf

BUK9Y2R8-40HN-channel 40 V, 2.8 m logic level MOSFET in LFPAK5631 May 2018 Product data sheet1. General descriptionAutomotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunctiontechnology, housed in a robust LFPAK56 package. This product has been fully designed andqualified to meet AEC-Q101 requirements delivering high performance and endurance.2. Featur
buk9y22-30b.pdf

BUK9Y22-30BN-channel TrenchMOS logic level FETRev. 04 7 April 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
buk9y25-80e.pdf

BUK9Y25-80EN-channel 80 V, 27 m logic level MOSFET in LFPAK568 May 2013 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.2. Features and benefits Q101 compliant Repetitive a
Otros transistores... BUK9M7R2-40E , BUK9M85-60E , BUK9M8R5-40H , BUK9M9R1-40E , BUK9M9R5-40H , BUK9Y1R3-40H , BUK9Y1R6-40H , BUK9Y1R9-40H , AON7410 , BUK9Y2R8-40H , GAN063-650WSA , NX138AK , NX138AKS , NX138BK , NX138BKS , NX138BKW , NX3008NBKMB .
History: VBZE7843 | BSC052N03LS | NVHL025N65S3 | AM3443C | IRF7805ZPBF-1
History: VBZE7843 | BSC052N03LS | NVHL025N65S3 | AM3443C | IRF7805ZPBF-1



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
tip107 | 2n5457 | k3568 | 2sc1344 | cs840f | 2n3053 equivalent | 2n3569 | 2sd667