BUK9Y2R4-40H Specs and Replacement

Type Designator: BUK9Y2R4-40H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 163 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26.3 nS

Cossⓘ - Output Capacitance: 859 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: SOT669

BUK9Y2R4-40H substitution

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BUK9Y2R4-40H datasheet

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BUK9Y2R4-40H

BUK9Y2R4-40H N-channel 40 V, 2.4 m logic level MOSFET in LFPAK56 4 June 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Featur... See More ⇒

 7.1. Size:262K  nxp
buk9y2r8-40h.pdf pdf_icon

BUK9Y2R4-40H

BUK9Y2R8-40H N-channel 40 V, 2.8 m logic level MOSFET in LFPAK56 31 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Featur... See More ⇒

 8.1. Size:810K  nxp
buk9y22-30b.pdf pdf_icon

BUK9Y2R4-40H

BUK9Y22-30B N-channel TrenchMOS logic level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features... See More ⇒

 8.2. Size:349K  nxp
buk9y25-80e.pdf pdf_icon

BUK9Y2R4-40H

BUK9Y25-80E N-channel 80 V, 27 m logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive a... See More ⇒

Detailed specifications: BUK9M7R2-40E, BUK9M85-60E, BUK9M8R5-40H, BUK9M9R1-40E, BUK9M9R5-40H, BUK9Y1R3-40H, BUK9Y1R6-40H, BUK9Y1R9-40H, SPP20N60C3, BUK9Y2R8-40H, GAN063-650WSA, NX138AK, NX138AKS, NX138BK, NX138BKS, NX138BKW, NX3008NBKMB

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.