NX138AKS Todos los transistores

 

NX138AKS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NX138AKS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.265 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 2.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
   Paquete / Cubierta: SOT363
 

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NX138AKS Datasheet (PDF)

 ..1. Size:783K  nxp
 nx138aks.pdf pdf_icon

NX138AKS

NX138AKS60 V, dual N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSt

 7.1. Size:781K  nxp
 nx138ak.pdf pdf_icon

NX138AKS

NX138AK60 V, N-channel Tench MOSFET10 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (

 9.1. Size:728K  nxp
 nx138bk.pdf pdf_icon

NX138AKS

NX138BK60 V, single N-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic

 9.2. Size:747K  nxp
 nx138bkw.pdf pdf_icon

NX138AKS

NX138BKW60 V, N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch

MOSTRAR MÁS

Otros transistores... BUK9M9R5-40H , BUK9Y1R3-40H , BUK9Y1R6-40H , BUK9Y1R9-40H , BUK9Y2R4-40H , BUK9Y2R8-40H , GAN063-650WSA , NX138AK , RFP50N06 , NX138BK , NX138BKS , NX138BKW , NX3008NBKMB , NX3008PBKMB , NX3020NAKS , NX3020NAKV , NX3020NAKW .

History: BSC042N03SG | STF18N65M2 | BLS6G2731S-130 | IPB80N04S3-H4 | GT68N12T | IRF3704ZL | SM4804DSK

 

 
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