Справочник MOSFET. NX138AKS

 

NX138AKS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NX138AKS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.265 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.17 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 2.3 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm
   Тип корпуса: SOT363
 

 Аналог (замена) для NX138AKS

   - подбор ⓘ MOSFET транзистора по параметрам

 

NX138AKS Datasheet (PDF)

 ..1. Size:783K  nxp
nx138aks.pdfpdf_icon

NX138AKS

NX138AKS60 V, dual N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSt

 7.1. Size:781K  nxp
nx138ak.pdfpdf_icon

NX138AKS

NX138AK60 V, N-channel Tench MOSFET10 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (

 9.1. Size:728K  nxp
nx138bk.pdfpdf_icon

NX138AKS

NX138BK60 V, single N-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic

 9.2. Size:747K  nxp
nx138bkw.pdfpdf_icon

NX138AKS

NX138BKW60 V, N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch

Другие MOSFET... BUK9M9R5-40H , BUK9Y1R3-40H , BUK9Y1R6-40H , BUK9Y1R9-40H , BUK9Y2R4-40H , BUK9Y2R8-40H , GAN063-650WSA , NX138AK , RFP50N06 , NX138BK , NX138BKS , NX138BKW , NX3008NBKMB , NX3008PBKMB , NX3020NAKS , NX3020NAKV , NX3020NAKW .

History: QH8MA4 | PNM523T703E0-2 | NCE82H140LL | PH3230S | HUFA76432S3S | STF110N10F7 | 2SK4067I

 

 
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