NX138BK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NX138BK

Código: BX*

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.265 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V

Qgⓘ - Carga de la puerta: 0.49 nC

trⓘ - Tiempo de subida: 8.4 nS

Cossⓘ - Capacitancia de salida: 3.1 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm

Encapsulados: SOT23

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NX138BK datasheet

 ..1. Size:728K  nxp
 nx138bk.pdf pdf_icon

NX138BK

NX138BK 60 V, single N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic

 0.1. Size:747K  nxp
 nx138bkw.pdf pdf_icon

NX138BK

NX138BKW 60 V, N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch

 0.2. Size:754K  nxp
 nx138bks.pdf pdf_icon

NX138BK

NX138BKS 60 V, dual N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSta

 9.1. Size:783K  nxp
 nx138aks.pdf pdf_icon

NX138BK

NX138AKS 60 V, dual N-channel Trench MOSFET 15 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSt

MOSTRAR MÁS

Otros transistores... BUK9Y1R3-40H, BUK9Y1R6-40H, BUK9Y1R9-40H, BUK9Y2R4-40H, BUK9Y2R8-40H, GAN063-650WSA, NX138AK, NX138AKS, 12N60, NX138BKS, NX138BKW, NX3008NBKMB, NX3008PBKMB, NX3020NAKS, NX3020NAKV, NX3020NAKW, NX6020CAKS