NX138BK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NX138BK
Маркировка: BX*
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.31 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1.5 V
Максимально допустимый постоянный ток стока |Id|: 0.265 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 0.49 nC
Время нарастания (tr): 8.4 ns
Выходная емкость (Cd): 3.1 pf
Сопротивление сток-исток открытого транзистора (Rds): 3.5 Ohm
Тип корпуса: SOT23
NX138BK Datasheet (PDF)
nx138bk.pdf
NX138BK60 V, single N-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic
nx138bkw.pdf
NX138BKW60 V, N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Disch
nx138bks.pdf
NX138BKS60 V, dual N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSta
nx138aks.pdf
NX138AKS60 V, dual N-channel Trench MOSFET15 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroSt
nx138ak.pdf
NX138AK60 V, N-channel Tench MOSFET10 June 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
