NX3008PBKMB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NX3008PBKMB

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 6.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.1 Ohm

Encapsulados: SOT883B

 Búsqueda de reemplazo de NX3008PBKMB MOSFET

- Selecciónⓘ de transistores por parámetros

 

NX3008PBKMB datasheet

 ..1. Size:1653K  nxp
 nx3008pbkmb.pdf pdf_icon

NX3008PBKMB

NX3008PBKMB 30 V, single P-channel Trench MOSFET Rev. 1 11 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up

 5.1. Size:1607K  nxp
 nx3008pbkv.pdf pdf_icon

NX3008PBKMB

NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection

 5.2. Size:1602K  nxp
 nx3008pbk.pdf pdf_icon

NX3008PBKMB

NX3008PBK 30 V, 230 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 5.3. Size:1601K  nxp
 nx3008pbkw.pdf pdf_icon

NX3008PBKMB

NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

MOSTRAR MÁS

Otros transistores... BUK9Y2R8-40H, GAN063-650WSA, NX138AK, NX138AKS, NX138BK, NX138BKS, NX138BKW, NX3008NBKMB, AON6380, NX3020NAKS, NX3020NAKV, NX3020NAKW, NX6020CAKS, NX7002AKA, NX7002BKH, PMCM4401UNE, PMCM4401UPE