All MOSFET. NX3008PBKMB Datasheet

 

NX3008PBKMB Datasheet and Replacement


   Type Designator: NX3008PBKMB
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 6.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.1 Ohm
   Package: SOT883B
 

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NX3008PBKMB Datasheet (PDF)

 ..1. Size:1653K  nxp
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NX3008PBKMB

NX3008PBKMB30 V, single P-channel Trench MOSFETRev. 1 11 May 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up

 5.1. Size:1607K  nxp
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NX3008PBKMB

NX3008PBKV30 V, 220 mA dual P-channel Trench MOSFETRev. 1 29 July 2011 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection

 5.2. Size:1602K  nxp
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NX3008PBKMB

NX3008PBK30 V, 230 mA P-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low t

 5.3. Size:1601K  nxp
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NX3008PBKMB

NX3008PBKW30 V, 200 mA P-channel Trench MOSFETRev. 1 1 August 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low thre

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Datasheet: BUK9Y2R8-40H , GAN063-650WSA , NX138AK , NX138AKS , NX138BK , NX138BKS , NX138BKW , NX3008NBKMB , IRLZ44N , NX3020NAKS , NX3020NAKV , NX3020NAKW , NX6020CAKS , NX7002AKA , NX7002BKH , PMCM4401UNE , PMCM4401UPE .

History: RSR020P03 | OSG60R670AF | RJK1211DNS | HM2309B | QJD1210011 | WFY6N02 | SPB80P06PG

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