PMCM6501UNE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMCM6501UNE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.556 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 6.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 19 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm

Encapsulados: WLCSP6

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PMCM6501UNE datasheet

 ..1. Size:384K  nxp
 pmcm6501une.pdf pdf_icon

PMCM6501UNE

PMCM6501UNE 20 V, N-channel Trench MOSFET 30 May 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc

 5.1. Size:378K  nxp
 pmcm6501upe.pdf pdf_icon

PMCM6501UNE

PMCM6501UPE 20 V, P-channel Trench MOSFET 3 July 2017 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

 6.1. Size:771K  nxp
 pmcm6501vne.pdf pdf_icon

PMCM6501UNE

PMCM6501VNE 12 V, N-channel Trench MOSFET 26 August 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D

 6.2. Size:360K  nxp
 pmcm6501vpe.pdf pdf_icon

PMCM6501UNE

PMCM6501VPE 12 V, P-channel Trench MOSFET 10 August 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D

MOSTRAR MÁS

Otros transistores... NX3020NAKV, NX3020NAKW, NX6020CAKS, NX7002AKA, NX7002BKH, PMCM4401UNE, PMCM4401UPE, PMCM4402UPE, 4N60, PMCM6501UPE, PMCM6501VNE, PMCM650CUNE, PMCM950ENE, PMCXB1000UE, PMCXB900UEL, PMDPB56XNEA, PMDPB95XNE2