PMCM6501VNE Todos los transistores

 

PMCM6501VNE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMCM6501VNE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.556 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 7.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33.5 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: WLCSP6
 

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PMCM6501VNE Datasheet (PDF)

 ..1. Size:771K  nxp
 pmcm6501vne.pdf pdf_icon

PMCM6501VNE

PMCM6501VNE12 V, N-channel Trench MOSFET26 August 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D

 5.1. Size:360K  nxp
 pmcm6501vpe.pdf pdf_icon

PMCM6501VNE

PMCM6501VPE12 V, P-channel Trench MOSFET10 August 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D

 6.1. Size:384K  nxp
 pmcm6501une.pdf pdf_icon

PMCM6501VNE

PMCM6501UNE20 V, N-channel Trench MOSFET30 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc

 6.2. Size:378K  nxp
 pmcm6501upe.pdf pdf_icon

PMCM6501VNE

PMCM6501UPE20 V, P-channel Trench MOSFET3 July 2017 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

MOSTRAR MÁS

Otros transistores... NX6020CAKS , NX7002AKA , NX7002BKH , PMCM4401UNE , PMCM4401UPE , PMCM4402UPE , PMCM6501UNE , PMCM6501UPE , P0903BDG , PMCM650CUNE , PMCM950ENE , PMCXB1000UE , PMCXB900UEL , PMDPB56XNEA , PMDPB95XNE2 , PMDXB600UNEL , PMDXB950UPEL .

History: SIA446DJ | AOL1428A | AP4419GH | AO4423-L | AM90N03-01P | IRFPC60PBF | IPB320N20N3G

 

 
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