PMCM6501VNE Specs and Replacement

Type Designator: PMCM6501VNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.556 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33.5 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: WLCSP6

PMCM6501VNE substitution

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PMCM6501VNE datasheet

 ..1. Size:771K  nxp
 pmcm6501vne.pdf pdf_icon

PMCM6501VNE

PMCM6501VNE 12 V, N-channel Trench MOSFET 26 August 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D... See More ⇒

 5.1. Size:360K  nxp
 pmcm6501vpe.pdf pdf_icon

PMCM6501VNE

PMCM6501VPE 12 V, P-channel Trench MOSFET 10 August 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic D... See More ⇒

 6.1. Size:384K  nxp
 pmcm6501une.pdf pdf_icon

PMCM6501VNE

PMCM6501UNE 20 V, N-channel Trench MOSFET 30 May 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Disc... See More ⇒

 6.2. Size:378K  nxp
 pmcm6501upe.pdf pdf_icon

PMCM6501VNE

PMCM6501UPE 20 V, P-channel Trench MOSFET 3 July 2017 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.98 x 1.48 x 0.35 mm Trench MOSFET technology ElectroStatic Discha... See More ⇒

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Detailed specifications: NX6020CAKS, NX7002AKA, NX7002BKH, PMCM4401UNE, PMCM4401UPE, PMCM4402UPE, PMCM6501UNE, PMCM6501UPE, IRF1407, PMCM650CUNE, PMCM950ENE, PMCXB1000UE, PMCXB900UEL, PMDPB56XNEA, PMDPB95XNE2, PMDXB600UNEL, PMDXB950UPEL

Keywords - PMCM6501VNE MOSFET specs

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