PMDPB56XNEA Todos los transistores

 

PMDPB56XNEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMDPB56XNEA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.485 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 31 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
   Paquete / Cubierta: SOT1118D
 

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PMDPB56XNEA Datasheet (PDF)

 ..1. Size:727K  nxp
 pmdpb56xnea.pdf pdf_icon

PMDPB56XNEA

PMDPB56XNEA30 V, dual N-channel Trench MOSFET19 April 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessDFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium

 5.1. Size:879K  nxp
 pmdpb56xn.pdf pdf_icon

PMDPB56XNEA

PMDPB56XN30 V, dual N-channel Trench MOSFETRev. 1 16 May 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 8.1. Size:879K  nxp
 pmdpb55xp.pdf pdf_icon

PMDPB56XNEA

PMDPB55XP20 V, dual P-channel Trench MOSFETRev. 3 4 June 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 8.2. Size:875K  nxp
 pmdpb58upe.pdf pdf_icon

PMDPB56XNEA

PMDPB58UPE20 V dual P-channel Trench MOSFETRev. 1 19 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage

MOSTRAR MÁS

Otros transistores... PMCM4402UPE , PMCM6501UNE , PMCM6501UPE , PMCM6501VNE , PMCM650CUNE , PMCM950ENE , PMCXB1000UE , PMCXB900UEL , IRFZ46N , PMDPB95XNE2 , PMDXB600UNEL , PMDXB950UPEL , PMF250XNE , PMF63UNE , PMH1200UPE , PMH950UPE , PMN120ENE .

History: IRHN57250SE | HAT2184WP | SSM9585GM

 

 
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