PMDPB56XNEA Specs and Replacement

Type Designator: PMDPB56XNEA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.485 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 31 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: SOT1118D

PMDPB56XNEA substitution

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PMDPB56XNEA datasheet

 ..1. Size:727K  nxp
pmdpb56xnea.pdf pdf_icon

PMDPB56XNEA

PMDPB56XNEA 30 V, dual N-channel Trench MOSFET 19 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium... See More ⇒

 5.1. Size:879K  nxp
pmdpb56xn.pdf pdf_icon

PMDPB56XNEA

PMDPB56XN 30 V, dual N-channel Trench MOSFET Rev. 1 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small an... See More ⇒

 8.1. Size:879K  nxp
pmdpb55xp.pdf pdf_icon

PMDPB56XNEA

PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 3 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small an... See More ⇒

 8.2. Size:875K  nxp
pmdpb58upe.pdf pdf_icon

PMDPB56XNEA

PMDPB58UPE 20 V dual P-channel Trench MOSFET Rev. 1 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage ... See More ⇒

Detailed specifications: PMCM4402UPE, PMCM6501UNE, PMCM6501UPE, PMCM6501VNE, PMCM650CUNE, PMCM950ENE, PMCXB1000UE, PMCXB900UEL, SI2302, PMDPB95XNE2, PMDXB600UNEL, PMDXB950UPEL, PMF250XNE, PMF63UNE, PMH1200UPE, PMH950UPE, PMN120ENE

Keywords - PMDPB56XNEA MOSFET specs

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