PMDXB600UNEL Todos los transistores

 

PMDXB600UNEL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMDXB600UNEL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.265 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9.2 nS
   Cossⓘ - Capacitancia de salida: 5.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm
   Paquete / Cubierta: SOT1216
 

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PMDXB600UNEL Datasheet (PDF)

 ..1. Size:734K  nxp
 pmdxb600unel.pdf pdf_icon

PMDXB600UNEL

PMDXB600UNEL20 V, dual N-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Leadless ultra small and ultra thin SMD plasti

 3.1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB600UNEL

PMDXB600UNE20 V, dual N-channel Trench MOSFET1 July 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla

 9.1. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB600UNEL

PMDXB1200UPE30 V, dual P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla

 9.2. Size:237K  nxp
 pmdxb550une.pdf pdf_icon

PMDXB600UNEL

PMDXB550UNE30 V, dual N-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plas

MOSTRAR MÁS

Otros transistores... PMCM6501UPE , PMCM6501VNE , PMCM650CUNE , PMCM950ENE , PMCXB1000UE , PMCXB900UEL , PMDPB56XNEA , PMDPB95XNE2 , 75N75 , PMDXB950UPEL , PMF250XNE , PMF63UNE , PMH1200UPE , PMH950UPE , PMN120ENE , PMN120ENEA , PMN16XNE .

History: STL22N65M5

 

 
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