PMDXB600UNEL Specs and Replacement

Type Designator: PMDXB600UNEL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.265 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.2 nS

Cossⓘ - Output Capacitance: 5.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm

Package: SOT1216

PMDXB600UNEL substitution

- MOSFET ⓘ Cross-Reference Search

 

PMDXB600UNEL datasheet

 ..1. Size:734K  nxp
 pmdxb600unel.pdf pdf_icon

PMDXB600UNEL

PMDXB600UNEL 20 V, dual N-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Leadless ultra small and ultra thin SMD plasti... See More ⇒

 3.1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB600UNEL

PMDXB600UNE 20 V, dual N-channel Trench MOSFET 1 July 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla... See More ⇒

 9.1. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB600UNEL

PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla... See More ⇒

 9.2. Size:237K  nxp
 pmdxb550une.pdf pdf_icon

PMDXB600UNEL

PMDXB550UNE 30 V, dual N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plas... See More ⇒

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Detailed specifications: PMCM6501UPE, PMCM6501VNE, PMCM650CUNE, PMCM950ENE, PMCXB1000UE, PMCXB900UEL, PMDPB56XNEA, PMDPB95XNE2, 18N50, PMDXB950UPEL, PMF250XNE, PMF63UNE, PMH1200UPE, PMH950UPE, PMN120ENE, PMN120ENEA, PMN16XNE

Keywords - PMDXB600UNEL MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.