All MOSFET. PMDXB600UNEL Datasheet

 

PMDXB600UNEL Datasheet and Replacement


   Type Designator: PMDXB600UNEL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.265 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 5.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: SOT1216
 

 PMDXB600UNEL substitution

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PMDXB600UNEL Datasheet (PDF)

 ..1. Size:734K  nxp
 pmdxb600unel.pdf pdf_icon

PMDXB600UNEL

PMDXB600UNEL20 V, dual N-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Leadless ultra small and ultra thin SMD plasti

 3.1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB600UNEL

PMDXB600UNE20 V, dual N-channel Trench MOSFET1 July 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla

 9.1. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB600UNEL

PMDXB1200UPE30 V, dual P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla

 9.2. Size:237K  nxp
 pmdxb550une.pdf pdf_icon

PMDXB600UNEL

PMDXB550UNE30 V, dual N-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plas

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Datasheet: PMCM6501UPE , PMCM6501VNE , PMCM650CUNE , PMCM950ENE , PMCXB1000UE , PMCXB900UEL , PMDPB56XNEA , PMDPB95XNE2 , 75N75 , PMDXB950UPEL , PMF250XNE , PMF63UNE , PMH1200UPE , PMH950UPE , PMN120ENE , PMN120ENEA , PMN16XNE .

History: PJP4NA90 | JBL102Y | AFN4936WS | DMP2023UFDF | SE80250G | SSM3J327F | BUK625R2-30C

Keywords - PMDXB600UNEL MOSFET datasheet

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