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PMN70EPE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMN70EPE
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 64 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TSOP6
 

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PMN70EPE Datasheet (PDF)

 ..1. Size:265K  nxp
 pmn70epe.pdf pdf_icon

PMN70EPE

PMN70EPE30 V, P-channel Trench MOSFET23 May 2017 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipati

 9.1. Size:201K  nxp
 pmn70xpe.pdf pdf_icon

PMN70EPE

PMN70XPE20 V, single P-channel Trench MOSFET6 July 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology

 9.2. Size:276K  nxp
 pmn70xpea.pdf pdf_icon

PMN70EPE

PMN70XPEA20 V, single P-channel Trench MOSFET19 June 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Fast switching Trench MOSFET technology 2 kV ESD protection

 9.3. Size:735K  nxp
 pmn70xp.pdf pdf_icon

PMN70EPE

PMN70XP20 V, P-channel Trench MOSFET29 January 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipat

MOSTRAR MÁS

Otros transistores... PMN30XPE , PMN40ENA , PMN40ENE , PMN48XPA , PMN50EPE , PMN52XP , PMN55ENE , PMN55ENEA , AO4468 , PMN70XP , PMPB100ENE , PMPB100XPEA , PMPB10EN , PMPB10UP , PMPB10XNEA , PMPB12UNE , PMPB12UNEA .

History: CS4N65 | SSM3K315T | BSF077N06NT3G | QM2507W | IPD60R280PFD7S | NCE60P12K | BL7N65B-A

 

 
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