PMPB10EN Todos los transistores

 

PMPB10EN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMPB10EN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: SOT1220
 

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PMPB10EN Datasheet (PDF)

 ..1. Size:340K  nxp
 pmpb10en.pdf pdf_icon

PMPB10EN

PMPB10EN30 V, N-channel MOSFET10 July 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench Superjunction Technology

 8.1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB10EN

PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

 8.2. Size:316K  nxp
 pmpb100ene.pdf pdf_icon

PMPB10EN

PMPB100ENE30 V, N-channel MOSFET26 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic

 8.3. Size:247K  nxp
 pmpb10xne.pdf pdf_icon

PMPB10EN

PMPB10XNE20 V, single N-channel Trench MOSFET30 November 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult

MOSTRAR MÁS

Otros transistores... PMN50EPE , PMN52XP , PMN55ENE , PMN55ENEA , PMN70EPE , PMN70XP , PMPB100ENE , PMPB100XPEA , IRFZ44N , PMPB10UP , PMPB10XNEA , PMPB12UNE , PMPB12UNEA , PMPB13UP , PMPB13XNEA , PMPB14XP , PMPB15XPA .

History: VS3640DP | DMTH8012LK3 | HGD090NE6A | P0603BDG | SVGP159R3NL5ATR | 2SK17 | N0434N

 

 
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