PMPB10EN Specs and Replacement

Type Designator: PMPB10EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOT1220

PMPB10EN substitution

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PMPB10EN datasheet

 ..1. Size:340K  nxp
 pmpb10en.pdf pdf_icon

PMPB10EN

PMPB10EN 30 V, N-channel MOSFET 10 July 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench Superjunction Technology ... See More ⇒

 8.1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB10EN

PMPB100XPEA 20 V, P-channel Trench MOSFET 13 November 2019 Product data sheet 1. General Description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S... See More ⇒

 8.2. Size:316K  nxp
 pmpb100ene.pdf pdf_icon

PMPB10EN

PMPB100ENE 30 V, N-channel MOSFET 26 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic ... See More ⇒

 8.3. Size:247K  nxp
 pmpb10xne.pdf pdf_icon

PMPB10EN

PMPB10XNE 20 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult... See More ⇒

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Detailed specifications: PMN50EPE, PMN52XP, PMN55ENE, PMN55ENEA, PMN70EPE, PMN70XP, PMPB100ENE, PMPB100XPEA, IRFZ44N, PMPB10UP, PMPB10XNEA, PMPB12UNE, PMPB12UNEA, PMPB13UP, PMPB13XNEA, PMPB14XP, PMPB15XPA

Keywords - PMPB10EN MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.