PMPB10EN
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMPB10EN
Marking Code: 5E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13.7
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 155
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package: SOT1220
PMPB10EN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMPB10EN
Datasheet (PDF)
..1. Size:340K nxp
pmpb10en.pdf
PMPB10EN30 V, N-channel MOSFET10 July 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench Superjunction Technology
8.1. Size:321K nxp
pmpb100xpea.pdf
PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S
8.2. Size:316K nxp
pmpb100ene.pdf
PMPB100ENE30 V, N-channel MOSFET26 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic
8.3. Size:247K nxp
pmpb10xne.pdf
PMPB10XNE20 V, single N-channel Trench MOSFET30 November 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult
8.4. Size:314K nxp
pmpb10up.pdf
PMPB10UP12 V, P-channel Trench MOSFET24 January 2020 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
8.5. Size:294K nxp
pmpb10xnea.pdf
PMPB10XNEA20 V, N-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
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