PMPB10XNEA Todos los transistores

 

PMPB10XNEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMPB10XNEA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 235 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: SOT1220
 

 Búsqueda de reemplazo de PMPB10XNEA MOSFET

   - Selección ⓘ de transistores por parámetros

 

PMPB10XNEA Datasheet (PDF)

 ..1. Size:294K  nxp
 pmpb10xnea.pdf pdf_icon

PMPB10XNEA

PMPB10XNEA20 V, N-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 5.1. Size:247K  nxp
 pmpb10xne.pdf pdf_icon

PMPB10XNEA

PMPB10XNE20 V, single N-channel Trench MOSFET30 November 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult

 8.1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB10XNEA

PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

 8.2. Size:316K  nxp
 pmpb100ene.pdf pdf_icon

PMPB10XNEA

PMPB100ENE30 V, N-channel MOSFET26 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic

MOSTRAR MÁS

Otros transistores... PMN55ENE , PMN55ENEA , PMN70EPE , PMN70XP , PMPB100ENE , PMPB100XPEA , PMPB10EN , PMPB10UP , IRF740 , PMPB12UNE , PMPB12UNEA , PMPB13UP , PMPB13XNEA , PMPB14XP , PMPB15XPA , PMPB16EP , PMPB20XNEA .

History: AP4024EH | IXTH88N15 | TJ8S06M3L | 2SK1696 | SM3307PSQG | IXFH22N50P | SSM3K315T

 

 
Back to Top

 


 
.