PMPB10XNEA Specs and Replacement

Type Designator: PMPB10XNEA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 235 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOT1220

PMPB10XNEA substitution

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PMPB10XNEA datasheet

 ..1. Size:294K  nxp
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PMPB10XNEA

PMPB10XNEA 20 V, N-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo... See More ⇒

 5.1. Size:247K  nxp
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PMPB10XNEA

PMPB10XNE 20 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult... See More ⇒

 8.1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB10XNEA

PMPB100XPEA 20 V, P-channel Trench MOSFET 13 November 2019 Product data sheet 1. General Description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S... See More ⇒

 8.2. Size:316K  nxp
 pmpb100ene.pdf pdf_icon

PMPB10XNEA

PMPB100ENE 30 V, N-channel MOSFET 26 April 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic ... See More ⇒

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Detailed specifications: PMN55ENE, PMN55ENEA, PMN70EPE, PMN70XP, PMPB100ENE, PMPB100XPEA, PMPB10EN, PMPB10UP, IRF740, PMPB12UNE, PMPB12UNEA, PMPB13UP, PMPB13XNEA, PMPB14XP, PMPB15XPA, PMPB16EP, PMPB20XNEA

Keywords - PMPB10XNEA MOSFET specs

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