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PMPB12UNE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMPB12UNE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.47 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 124 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SOT1220
 

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PMPB12UNE Datasheet (PDF)

 ..1. Size:742K  nxp
 pmpb12une.pdf pdf_icon

PMPB12UNE

PMPB12UNE20 V, N-channel Trench MOSFET12 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Exposed drain pad for ex

 0.1. Size:290K  nxp
 pmpb12unea.pdf pdf_icon

PMPB12UNE

PMPB12UNEA20 V, N-channel Trench MOSFET26 March 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 6.1. Size:231K  nxp
 pmpb12un.pdf pdf_icon

PMPB12UNE

PMPB12UN20 V single N-channel Trench MOSFET6 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Very fast switching S

 9.1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB12UNE

PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

MOSTRAR MÁS

Otros transistores... PMN55ENEA , PMN70EPE , PMN70XP , PMPB100ENE , PMPB100XPEA , PMPB10EN , PMPB10UP , PMPB10XNEA , IRF840 , PMPB12UNEA , PMPB13UP , PMPB13XNEA , PMPB14XP , PMPB15XPA , PMPB16EP , PMPB20XNEA , PMPB20XPEA .

History: KI2304DS | HSU80N03

 

 
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