Справочник MOSFET. PMPB12UNE

 

PMPB12UNE Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMPB12UNE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.47 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 124 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: SOT1220
     - подбор MOSFET транзистора по параметрам

 

PMPB12UNE Datasheet (PDF)

 ..1. Size:742K  nxp
 pmpb12une.pdf pdf_icon

PMPB12UNE

PMPB12UNE20 V, N-channel Trench MOSFET12 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Exposed drain pad for ex

 0.1. Size:290K  nxp
 pmpb12unea.pdf pdf_icon

PMPB12UNE

PMPB12UNEA20 V, N-channel Trench MOSFET26 March 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 6.1. Size:231K  nxp
 pmpb12un.pdf pdf_icon

PMPB12UNE

PMPB12UN20 V single N-channel Trench MOSFET6 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Very fast switching S

 9.1. Size:321K  nxp
 pmpb100xpea.pdf pdf_icon

PMPB12UNE

PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

ПОКАЗАТЬ ЕЩЁ

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History: 2SK1704 | STD15N06T4 | AU4N60S | PSMN5R4-25YLD | FHF15N60A | DMC1028UFDB | PJZ9NA90

 

 
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