PMPB13XNEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PMPB13XNEA
   Código: 4G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 155 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SOT1220

Búsqueda de reemplazo de MOSFET PMPB13XNEA

PMPB13XNEA Datasheet (PDF)

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pmpb13xnea.pdf

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pmpb13xne.pdf

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pmpb100xpea.pdf

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9.2. Size:290K nxp
pmpb12unea.pdf

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9.3. Size:742K nxp
pmpb12une.pdf

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9.4. Size:227K nxp
pmpb15xn.pdf

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9.5. Size:316K nxp
pmpb100ene.pdf

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9.6. Size:247K nxp
pmpb10xne.pdf

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pmpb15xpa.pdf

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pmpb16ep.pdf

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pmpb10up.pdf

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pmpb15xp.pdf

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pmpb14xp.pdf

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pmpb19xp.pdf

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pmpb11en.pdf

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pmpb10xnea.pdf

PMPB10XNEA20 V, N-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

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