All MOSFET. PMPB13XNEA Datasheet

 

PMPB13XNEA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMPB13XNEA
   Marking Code: 4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SOT1220

 PMPB13XNEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMPB13XNEA Datasheet (PDF)

 ..1. Size:294K  nxp
pmpb13xnea.pdf

PMPB13XNEA
PMPB13XNEA

PMPB13XNEA30 V, N-channel Trench MOSFET10 September 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flank

 5.1. Size:267K  nxp
pmpb13xne.pdf

PMPB13XNEA
PMPB13XNEA

PMPB13XNE30 V, single N-channel Trench MOSFET26 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits 1 kV ESD protection Small and leadless ultra thin SMD plastic pack

 8.1. Size:325K  nxp
pmpb13up.pdf

PMPB13XNEA
PMPB13XNEA

PMPB13UP12 V, P-channel Trench MOSFET4 September 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks f

 9.1. Size:321K  nxp
pmpb100xpea.pdf

PMPB13XNEA
PMPB13XNEA

PMPB100XPEA20 V, P-channel Trench MOSFET13 November 2019 Product data sheet1. General DescriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin S

 9.2. Size:290K  nxp
pmpb12unea.pdf

PMPB13XNEA
PMPB13XNEA

PMPB12UNEA20 V, N-channel Trench MOSFET26 March 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 9.3. Size:742K  nxp
pmpb12une.pdf

PMPB13XNEA
PMPB13XNEA

PMPB12UNE20 V, N-channel Trench MOSFET12 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Exposed drain pad for ex

 9.4. Size:227K  nxp
pmpb15xn.pdf

PMPB13XNEA
PMPB13XNEA

PMPB15XN20 V, single N-channel Trench MOSFET13 September 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless

 9.5. Size:316K  nxp
pmpb100ene.pdf

PMPB13XNEA
PMPB13XNEA

PMPB100ENE30 V, N-channel MOSFET26 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD plastic

 9.6. Size:247K  nxp
pmpb10xne.pdf

PMPB13XNEA
PMPB13XNEA

PMPB10XNE20 V, single N-channel Trench MOSFET30 November 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.2 kV ESD protection Small and leadless ult

 9.7. Size:298K  nxp
pmpb15xpa.pdf

PMPB13XNEA
PMPB13XNEA

PMPB15XPA12 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for

 9.8. Size:308K  nxp
pmpb16ep.pdf

PMPB13XNEA
PMPB13XNEA

PMPB16EP30 V, P-channel Trench MOSFET24 September 2019 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Trench MOSFET technology Side wettable flanks

 9.9. Size:231K  nxp
pmpb12un.pdf

PMPB13XNEA
PMPB13XNEA

PMPB12UN20 V single N-channel Trench MOSFET6 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Very fast switching S

 9.10. Size:238K  nxp
pmpb16xn.pdf

PMPB13XNEA
PMPB13XNEA

PMPB16XN30 V, single N-channel Trench MOSFET20 September 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless

 9.11. Size:314K  nxp
pmpb10up.pdf

PMPB13XNEA
PMPB13XNEA

PMPB10UP12 V, P-channel Trench MOSFET24 January 2020 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 9.12. Size:252K  nxp
pmpb15xp.pdf

PMPB13XNEA
PMPB13XNEA

PMPB15XP12 V, single P-channel Trench MOSFET22 November 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 1.5 kV ESD protection (human body model) Tren

 9.13. Size:340K  nxp
pmpb14xp.pdf

PMPB13XNEA
PMPB13XNEA

PMPB14XP12 V, P-channel Trench MOSFET3 July 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks for op

 9.14. Size:247K  nxp
pmpb19xp.pdf

PMPB13XNEA
PMPB13XNEA

PMPB19XP20 V, single P-channel Trench MOSFET20 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless

 9.15. Size:266K  nxp
pmpb11en.pdf

PMPB13XNEA
PMPB13XNEA

PMPB11EN30 V N-channel Trench MOSFET14 January 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra t

 9.16. Size:294K  nxp
pmpb10xnea.pdf

PMPB13XNEA
PMPB13XNEA

PMPB10XNEA20 V, N-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 9.17. Size:340K  nxp
pmpb10en.pdf

PMPB13XNEA
PMPB13XNEA

PMPB10EN30 V, N-channel MOSFET10 July 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench Superjunction Technology

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF7309

 

 
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