PMPB24EP
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMPB24EP
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.8
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 6.4
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6
nS
Cossⓘ - Capacitancia
de salida: 121
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028
Ohm
Paquete / Cubierta: SOT1220
- Selección de transistores por parámetros
PMPB24EP
Datasheet (PDF)
..1. Size:301K nxp
pmpb24ep.pdf 
PMPB24EP30 V, P-channel Trench MOSFET22 October 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Trench MOSFET technology Side wettable flanks f
9.1. Size:247K nxp
pmpb23xne.pdf
PMPB23XNE20 V, single N-channel Trench MOSFET30 November 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.1 kV ESD protection Small and leadless ult
9.2. Size:732K nxp
pmpb20xnea.pdf
PMPB20XNEA20 V, N-channel Trench MOSFET22 February 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology
9.3. Size:295K nxp
pmpb20xpea.pdf
PMPB20XPEA20 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
9.4. Size:291K nxp
pmpb27epa.pdf
PMPB27EPA30 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection
9.5. Size:278K nxp
pmpb29xpea.pdf
PMPB29XPEA20 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
9.6. Size:295K nxp
pmpb23xnea.pdf
PMPB23XNEA20 V, N-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo
9.7. Size:288K nxp
pmpb29xnea.pdf
PMPB29XNEA30 V, N-channel Trench MOSFET10 September 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flank
9.8. Size:235K nxp
pmpb215enea.pdf
PMPB215ENEA80 V, single N-channel Trench MOSFET18 December 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plast
9.9. Size:268K nxp
pmpb20en.pdf
PMPB20EN30 V N-channel Trench MOSFET14 January 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra t
9.10. Size:246K nxp
pmpb27ep.pdf
PMPB27EP30 V, single P-channel Trench MOSFET10 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless
9.11. Size:250K nxp
pmpb20xpe.pdf
PMPB20XPE20 V, single P-channel Trench MOSFET30 November 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.4 kV ESD protected Small and leadless ultr
9.12. Size:227K nxp
pmpb20un.pdf
PMPB20UN20 V, single N-channel Trench MOSFET12 September 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless
9.13. Size:258K nxp
pmpb29xne.pdf
PMPB29XNE30 V, single N-channel Trench MOSFET26 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits 1 kV ESD protection Small and leadless ultra thin SMD plastic pack
9.14. Size:233K nxp
pmpb29xpe.pdf
PMPB29XPE20 V, single P-channel Trench MOSFET5 December 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits 2.3 kV ESD protected Small and leadless ultra
9.15. Size:294K nxp
pmpb25ene.pdf
PMPB25ENE30 V, N-channel Trench MOSFET26 April 2018 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Extended temperature range Tj = 175 C Small and leadless ultra thin SMD pl
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History: SSM4920M
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