PMPB43XPEA Todos los transistores

 

PMPB43XPEA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMPB43XPEA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 142 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm
   Paquete / Cubierta: SOT1220

 Búsqueda de reemplazo de MOSFET PMPB43XPEA

 

Principales características: PMPB43XPEA

 ..1. Size:280K  nxp
 pmpb43xpea.pdf pdf_icon

PMPB43XPEA

PMPB43XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 5.1. Size:256K  nxp
 pmpb43xpe.pdf pdf_icon

PMPB43XPEA

PMPB43XPE 20 V, single P-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits 1 kV ESD protected Small and leadless ultra thin SMD plastic packa

 9.1. Size:280K  nxp
 pmpb48epa.pdf pdf_icon

PMPB43XPEA

PMPB48EPA 30 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection

 9.2. Size:235K  nxp
 pmpb48ep.pdf pdf_icon

PMPB43XPEA

PMPB48EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless

MOSTRAR MÁS

Otros transistores... PMPB20XPEA , PMPB23XNEA , PMPB24EP , PMPB25ENE , PMPB27EPA , PMPB29XNEA , PMPB29XPEA , PMPB30XPE , 10N60 , PMPB48EPA , PMPB50ENE , PMPB55ENEA , PMPB55XNEA , PMPB8XN , PMT200EPE , PMT280ENEA , PMT560ENEA .

History: HGB068N15S | HGB390N25S | HGP059N12S | HGB059N12SL

 

 
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