PMPB43XPEA Todos los transistores

 

PMPB43XPEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMPB43XPEA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 142 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm
   Paquete / Cubierta: SOT1220
 

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PMPB43XPEA Datasheet (PDF)

 ..1. Size:280K  nxp
 pmpb43xpea.pdf pdf_icon

PMPB43XPEA

PMPB43XPEA20 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

 5.1. Size:256K  nxp
 pmpb43xpe.pdf pdf_icon

PMPB43XPEA

PMPB43XPE20 V, single P-channel Trench MOSFET26 November 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits 1 kV ESD protected Small and leadless ultra thin SMD plastic packa

 9.1. Size:280K  nxp
 pmpb48epa.pdf pdf_icon

PMPB43XPEA

PMPB48EPA30 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection

 9.2. Size:235K  nxp
 pmpb48ep.pdf pdf_icon

PMPB43XPEA

PMPB48EP30 V, single P-channel Trench MOSFET10 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless

MOSTRAR MÁS

Otros transistores... PMPB20XPEA , PMPB23XNEA , PMPB24EP , PMPB25ENE , PMPB27EPA , PMPB29XNEA , PMPB29XPEA , PMPB30XPE , IRFB4227 , PMPB48EPA , PMPB50ENE , PMPB55ENEA , PMPB55XNEA , PMPB8XN , PMT200EPE , PMT280ENEA , PMT560ENEA .

History: HY3208APS | GSM9576 | AOW15S65 | STW20NM50FD | SVGQ06100ND | PJA138K | BUK962R1-40E

 

 
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