PMV28ENEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMV28ENEA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.66 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.4 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de PMV28ENEA MOSFET
PMV28ENEA Datasheet (PDF)
pmv28enea.pdf

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pmv28unea.pdf

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pmv28un.pdf

Product specificationPMV28UN20 V, 3.3 A N-channel Trench MOSFETRev. 1 26 May 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET te
Otros transistores... PMV15UNEA , PMV164ENEA , PMV19XNEA , PMV20XNEA , PMV230ENEA , PMV25ENEA , PMV27UPEA , PMV280ENEA , 2SK3568 , PMV28UNEA , PMV30ENEA , PMV30XPA , PMV30XPEA , PMV35EPE , PMV37ENEA , PMV42ENE , PMV450ENEA .
History: SST176 | NCEP080N85AK | SQM110P06-8M9L
History: SST176 | NCEP080N85AK | SQM110P06-8M9L



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