All MOSFET. PMV28ENEA Datasheet

 

PMV28ENEA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMV28ENEA
   Marking Code: HP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 5.3 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: SOT23

 PMV28ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV28ENEA Datasheet (PDF)

 ..1. Size:261K  nxp
pmv28enea.pdf

PMV28ENEA
PMV28ENEA

PMV28ENEA30 V, N-channel Trench MOSFET9 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele

 9.1. Size:736K  nxp
pmv28unea.pdf

PMV28ENEA
PMV28ENEA

PMV28UNEA20 V, N-channel Trench MOSFET10 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discha

 9.2. Size:263K  nxp
pmv280enea.pdf

PMV28ENEA
PMV28ENEA

PMV280ENEA100 V, N-channel Trench MOSFET11 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology

 9.3. Size:325K  tysemi
pmv28un.pdf

PMV28ENEA
PMV28ENEA

Product specificationPMV28UN20 V, 3.3 A N-channel Trench MOSFETRev. 1 26 May 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET te

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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