PMV28ENEA Datasheet. Specs and Replacement

Type Designator: PMV28ENEA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm

Package: SOT23

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PMV28ENEA datasheet

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PMV28ENEA

PMV28ENEA 30 V, N-channel Trench MOSFET 9 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele... See More ⇒

 9.1. Size:736K  nxp
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PMV28ENEA

PMV28UNEA 20 V, N-channel Trench MOSFET 10 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discha... See More ⇒

 9.2. Size:263K  nxp
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PMV28ENEA

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 9.3. Size:325K  tysemi
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PMV28ENEA

Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET te... See More ⇒

Detailed specifications: PMV15UNEA, PMV164ENEA, PMV19XNEA, PMV20XNEA, PMV230ENEA, PMV25ENEA, PMV27UPEA, PMV280ENEA, 4435, PMV28UNEA, PMV30ENEA, PMV30XPA, PMV30XPEA, PMV35EPE, PMV37ENEA, PMV42ENE, PMV450ENEA

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