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PMV60ENEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMV60ENEA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.615 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 36 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: SOT23
 

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PMV60ENEA Datasheet (PDF)

 ..1. Size:268K  nxp
 pmv60enea.pdf pdf_icon

PMV60ENEA

PMV60ENEA40 V, N-channel Trench MOSFET9 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele

 7.1. Size:238K  philips
 pmv60en.pdf pdf_icon

PMV60ENEA

PMV60ENTrenchMOS enhanced logic level FETRev. 01 15 January 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV60EN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High speed switch.1

 7.2. Size:96K  tysemi
 pmv60en.pdf pdf_icon

PMV60ENEA

Product specificationPMV60ENTrenchMOS enhanced logic level FETRev. 01 15 January 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV60EN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High s

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History: NP82N055NHE | 2SK2596 | TT8K11 | BSO200P03S

 

 
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