PMV60ENEA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMV60ENEA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.615 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 36 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: SOT23

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PMV60ENEA datasheet

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 pmv60enea.pdf pdf_icon

PMV60ENEA

PMV60ENEA 40 V, N-channel Trench MOSFET 9 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele

 7.1. Size:238K  philips
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PMV60ENEA

PMV60EN TrenchMOS enhanced logic level FET Rev. 01 15 January 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV60EN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High speed switch. 1

 7.2. Size:96K  tysemi
 pmv60en.pdf pdf_icon

PMV60ENEA

Product specification PMV60EN TrenchMOS enhanced logic level FET Rev. 01 15 January 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV60EN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High s

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