PMV60ENEA Spec and Replacement
Type Designator: PMV60ENEA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.615 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 36 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOT23
PMV60ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV60ENEA Specs
pmv60enea.pdf
PMV60ENEA 40 V, N-channel Trench MOSFET 9 May 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele... See More ⇒
pmv60en.pdf
PMV60EN TrenchMOS enhanced logic level FET Rev. 01 15 January 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV60EN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High speed switch. 1... See More ⇒
pmv60en.pdf
Product specification PMV60EN TrenchMOS enhanced logic level FET Rev. 01 15 January 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV60EN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High s... See More ⇒
Detailed specifications: PMV30XPEA , PMV35EPE , PMV37ENEA , PMV42ENE , PMV450ENEA , PMV48XPA2 , PMV52ENEA , PMV55ENEA , CS150N03A8 , PMV65ENEA , PMV74EPE , PMV88ENEA , PMV90ENE , PMZ600UNEL , PMZ950UPEL , PMZB600UNEL , PMZB950UPEL .
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