PMV60ENEA MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV60ENEA
Marking Code: HR*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.615 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 3.6 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 36 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOT23
PMV60ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV60ENEA Datasheet (PDF)
pmv60enea.pdf
PMV60ENEA40 V, N-channel Trench MOSFET9 May 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology Ele
pmv60en.pdf
PMV60ENTrenchMOS enhanced logic level FETRev. 01 15 January 2003 Product dataM3D0881. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV60EN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High speed switch.1
pmv60en.pdf
Product specificationPMV60ENTrenchMOS enhanced logic level FETRev. 01 15 January 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PMV60EN in SOT23.1.2 Features Surface mount package Fast switching.1.3 Applications Battery management High s
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
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