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PMV65ENEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMV65ENEA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.49 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: SOT23
 

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PMV65ENEA Datasheet (PDF)

 ..1. Size:715K  nxp
 pmv65enea.pdf pdf_icon

PMV65ENEA

PMV65ENEA40 V, N-channel Trench MOSFET28 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology Electrostatic Disch

 9.1. Size:79K  philips
 pmv65xp.pdf pdf_icon

PMV65ENEA

PMV65XPP-channel TrenchMOS extremely low level FETRev. 01 28 September 2004 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode field effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Low threshold voltage Low on-state resistance.1.3 Applications Low power DC-to-DC converters Battery management Load sw

 9.2. Size:264K  nxp
 pmv65xp.pdf pdf_icon

PMV65ENEA

PMV65XP20 V, single P-channel Trench MOSFET12 February 2013 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology3. Applicati

 9.3. Size:238K  nxp
 pmv65xpea.pdf pdf_icon

PMV65ENEA

PMV65XPEA20 V, P-channel Trench MOSFET27 November 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot

MOSTRAR MÁS

Otros transistores... PMV35EPE , PMV37ENEA , PMV42ENE , PMV450ENEA , PMV48XPA2 , PMV52ENEA , PMV55ENEA , PMV60ENEA , IRFP450 , PMV74EPE , PMV88ENEA , PMV90ENE , PMZ600UNEL , PMZ950UPEL , PMZB600UNEL , PMZB950UPEL , PSMN010-80YL .

History: 2N5640 | DM10N65C-2 | FMI13N60E

 

 
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