PMV65ENEA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMV65ENEA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.49 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: SOT23

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PMV65ENEA datasheet

 ..1. Size:715K  nxp
 pmv65enea.pdf pdf_icon

PMV65ENEA

PMV65ENEA 40 V, N-channel Trench MOSFET 28 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology Electrostatic Disch

 9.1. Size:79K  philips
 pmv65xp.pdf pdf_icon

PMV65ENEA

PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low threshold voltage Low on-state resistance. 1.3 Applications Low power DC-to-DC converters Battery management Load sw

 9.2. Size:264K  nxp
 pmv65xp.pdf pdf_icon

PMV65ENEA

PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology 3. Applicati

 9.3. Size:238K  nxp
 pmv65xpea.pdf pdf_icon

PMV65ENEA

PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability Ptot

MOSTRAR MÁS

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