Справочник MOSFET. PMV65ENEA

 

PMV65ENEA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PMV65ENEA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.49 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 25 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для PMV65ENEA

 

 

PMV65ENEA Datasheet (PDF)

 ..1. Size:715K  nxp
 pmv65enea.pdf

PMV65ENEA PMV65ENEA

PMV65ENEA40 V, N-channel Trench MOSFET28 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology Electrostatic Disch

 9.1. Size:79K  philips
 pmv65xp.pdf

PMV65ENEA PMV65ENEA

PMV65XPP-channel TrenchMOS extremely low level FETRev. 01 28 September 2004 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode field effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Low threshold voltage Low on-state resistance.1.3 Applications Low power DC-to-DC converters Battery management Load sw

 9.2. Size:264K  nxp
 pmv65xp.pdf

PMV65ENEA PMV65ENEA

PMV65XP20 V, single P-channel Trench MOSFET12 February 2013 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology3. Applicati

 9.3. Size:238K  nxp
 pmv65xpea.pdf

PMV65ENEA PMV65ENEA

PMV65XPEA20 V, P-channel Trench MOSFET27 November 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot

 9.4. Size:235K  nxp
 pmv65xpe.pdf

PMV65ENEA PMV65ENEA

PMV65XPE20 V, P-channel Trench MOSFET25 April 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot = 89

 9.5. Size:324K  tysemi
 pmv65xp.pdf

PMV65ENEA PMV65ENEA

Product specificationPMV65XP20 V, single P-channel Trench MOSFET12 February 2013 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET t

 9.6. Size:267K  tysemi
 pmv65un.pdf

PMV65ENEA PMV65ENEA

Product specificationPMV65UN20 V, single N-channel Trench MOSFET13 November 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Low threshold voltage Very fast switching

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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