PSMN012-60MS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN012-60MS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 53 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.7 nS
Cossⓘ - Capacitancia de salida: 167 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: SOT1210
Búsqueda de reemplazo de MOSFET PSMN012-60MS
Principales características: PSMN012-60MS
psmn012-60ms.pdf
PSMN012-60MS N-channel 60 V 12 m standard level MOSFET in LFPAK33 19 December 2019 Product data sheet 1. General description Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of motor, industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and
psmn012-60ys.pdf
PSMN012-60YS N-channel LFPAK 60 V, 11.1 m standard level MOSFET Rev. 01 5 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Trench
psmn012-60ys.pdf
PSMN012-60YS N-channel LFPAK 60 V, 11.1 m standard level MOSFET Rev. 01 5 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Trench
psmn012-80ps.pdf
PSMN012-80PS N-channel 80 V 11 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low
Otros transistores... PMV90ENE , PMZ600UNEL , PMZ950UPEL , PMZB600UNEL , PMZB950UPEL , PSMN010-80YL , PSMN011-100YSF , PSMN012-100YL , 10N65 , PSMN013-60YL , PSMN014-80YL , PSMN015-100YL , PSMN018-100ESF , PSMN018-100PSF , PSMN019-100YL , PSMN021-100YL , PSMN025-80YL .
History: PSMN013-60YL
History: PSMN013-60YL
Liste
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