PSMN012-60MS - Даташиты. Аналоги. Основные параметры
Наименование производителя: PSMN012-60MS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 53 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 9.7 ns
Cossⓘ - Выходная емкость: 167 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: SOT1210
Аналог (замена) для PSMN012-60MS
PSMN012-60MS Datasheet (PDF)
psmn012-60ms.pdf

PSMN012-60MSN-channel 60 V 12 m standard level MOSFET in LFPAK3319 December 2019 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. This product isdesigned and qualified for use in a wide range of motor, industrial, communications and domesticequipment.2. Features and benefits High efficiency due to low switching and
psmn012-60ys.pdf

PSMN012-60YSN-channel LFPAK 60 V, 11.1 m standard level MOSFETRev. 01 5 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench
psmn012-60ys.pdf

PSMN012-60YSN-channel LFPAK 60 V, 11.1 m standard level MOSFETRev. 01 5 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench
psmn012-80ps.pdf

PSMN012-80PSN-channel 80 V 11 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low
Другие MOSFET... PMV90ENE , PMZ600UNEL , PMZ950UPEL , PMZB600UNEL , PMZB950UPEL , PSMN010-80YL , PSMN011-100YSF , PSMN012-100YL , 75N75 , PSMN013-60YL , PSMN014-80YL , PSMN015-100YL , PSMN018-100ESF , PSMN018-100PSF , PSMN019-100YL , PSMN021-100YL , PSMN025-80YL .
History: STW70N10F4 | HGB200N10SL | 2SJ302-ZJ | EMB22A04G
History: STW70N10F4 | HGB200N10SL | 2SJ302-ZJ | EMB22A04G



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