PSMN015-100YL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN015-100YL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 195 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 69 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 269 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0147 Ohm

Encapsulados: SOT669

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PSMN015-100YL datasheet

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PSMN015-100YL

PSMN015-100YL N-channel 100 V, 15 m logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon

 3.1. Size:101K  philips
 psmn015-100p 100b.pdf pdf_icon

PSMN015-100YL

PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-

 3.2. Size:153K  philips
 psmn015-100 series hg 3.pdf pdf_icon

PSMN015-100YL

DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low therma

 3.3. Size:707K  nxp
 psmn015-100p.pdf pdf_icon

PSMN015-100YL

PSMN015-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 17 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

MOSTRAR MÁS

Otros transistores... PMZB600UNEL, PMZB950UPEL, PSMN010-80YL, PSMN011-100YSF, PSMN012-100YL, PSMN012-60MS, PSMN013-60YL, PSMN014-80YL, SI2302, PSMN018-100ESF, PSMN018-100PSF, PSMN019-100YL, PSMN021-100YL, PSMN025-80YL, PSMN0R9-25YLD, PSMN0R9-30ULD, PSMN1R0-25YLD