PSMN015-100YL Datasheet. Specs and Replacement
Type Designator: PSMN015-100YL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 69 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 269 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0147 Ohm
Package: SOT669
PSMN015-100YL substitution
- MOSFET ⓘ Cross-Reference Search
PSMN015-100YL datasheet
psmn015-100yl.pdf
PSMN015-100YL N-channel 100 V, 15 m logic level MOSFET in LFPAK56 4 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon... See More ⇒
psmn015-100p 100b.pdf
PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX products use the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-... See More ⇒
psmn015-100 series hg 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low therma... See More ⇒
psmn015-100p.pdf
PSMN015-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 06 17 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a... See More ⇒
Detailed specifications: PMZB600UNEL, PMZB950UPEL, PSMN010-80YL, PSMN011-100YSF, PSMN012-100YL, PSMN012-60MS, PSMN013-60YL, PSMN014-80YL, SI2302, PSMN018-100ESF, PSMN018-100PSF, PSMN019-100YL, PSMN021-100YL, PSMN025-80YL, PSMN0R9-25YLD, PSMN0R9-30ULD, PSMN1R0-25YLD
Keywords - PSMN015-100YL MOSFET specs
PSMN015-100YL cross reference
PSMN015-100YL equivalent finder
PSMN015-100YL pdf lookup
PSMN015-100YL substitution
PSMN015-100YL replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
