PSMN015-100YL MOSFET. Datasheet pdf. Equivalent

   Type Designator: PSMN015-100YL
   Marking Code: 15L100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 69 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 86.3 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 269 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0147 Ohm
   Package: SOT669

PSMN015-100YL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS