PSMN018-100PSF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PSMN018-100PSF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 111 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 53 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 21.4 nC
Tiempo de subida (tr): 14.1 nS
Conductancia de drenaje-sustrato (Cd): 280 pF
Resistencia entre drenaje y fuente RDS(on): 0.018 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET PSMN018-100PSF
PSMN018-100PSF Datasheet (PDF)
psmn018-100psf.pdf
PSMN018-100PSFNextPower 100 V, 18 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s
psmn018-100esf.pdf
PSMN018-100ESFNextPower 100 V, 18 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s
psmn018-80ys.pdf
PSMN018-80YSN-channel LFPAK 80 V 18 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO
psmn018-80ys.pdf
PSMN018-80YSN-channel LFPAK 80 V 18 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO
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