PSMN018-100PSF datasheet, аналоги, основные параметры
Наименование производителя: PSMN018-100PSF 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 111 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 53 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 14.1 ns
Cossⓘ - Выходная емкость: 280 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: TO-220AB
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Аналог (замена) для PSMN018-100PSF
- подборⓘ MOSFET транзистора по параметрам
PSMN018-100PSF даташит
psmn018-100psf.pdf
PSMN018-100PSF NextPower 100 V, 18 m N-channel MOSFET in TO220 package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s
psmn018-100esf.pdf
PSMN018-100ESF NextPower 100 V, 18 m N-channel MOSFET in I2PAK package 10 April 2017 Product data sheet 1. General description NextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended for industrial & consumer applications. 2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s
psmn018-80ys.pdf
PSMN018-80YS N-channel LFPAK 80 V 18 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO
psmn018-80ys.pdf
PSMN018-80YS N-channel LFPAK 80 V 18 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO
Другие IGBT... PSMN010-80YL, PSMN011-100YSF, PSMN012-100YL, PSMN012-60MS, PSMN013-60YL, PSMN014-80YL, PSMN015-100YL, PSMN018-100ESF, 18N50, PSMN019-100YL, PSMN021-100YL, PSMN025-80YL, PSMN0R9-25YLD, PSMN0R9-30ULD, PSMN1R0-25YLD, PSMN1R0-40SSH, PSMN1R0-40ULD
History: PSMN013-60YL | MSF20N50 | PE5A0DZ | TK80S06K3L | MSQ5N50 | MSW16N50 | SI5481DU
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