PSMN0R9-30ULD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PSMN0R9-30ULD  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 227 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 300 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49.8 nS

Cossⓘ - Capacitancia de salida: 2914 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00087 Ohm

Encapsulados: SOT1023A

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PSMN0R9-30ULD datasheet

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 psmn0r9-30uld.pdf pdf_icon

PSMN0R9-30ULD

PSMN0R9-30ULD N-channel 30 V, 0.87 m , 300 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPowerS3 Schottky-Plus Technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio util

 4.1. Size:290K  nxp
 psmn0r9-30yld.pdf pdf_icon

PSMN0R9-30ULD

PSMN0R9-30YLD N-channel 30 V, 0.87 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 11 November 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP s unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFE

 6.1. Size:300K  philips
 psmn0r9-25ylc.pdf pdf_icon

PSMN0R9-30ULD

PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

 6.2. Size:911K  nxp
 psmn0r9-25ylc.pdf pdf_icon

PSMN0R9-30ULD

PSMN0R9-25YLC N-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 4 July 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits

MOSTRAR MÁS

Otros transistores... PSMN014-80YL, PSMN015-100YL, PSMN018-100ESF, PSMN018-100PSF, PSMN019-100YL, PSMN021-100YL, PSMN025-80YL, PSMN0R9-25YLD, IRFZ24N, PSMN1R0-25YLD, PSMN1R0-40SSH, PSMN1R0-40ULD, PSMN1R0-40YSH, PSMN1R2-25YLD, PSMN1R5-25MLH, PSMN1R5-40YSD, PSMN1R6-30MLH