PSMN0R9-30ULD MOSFET. Datasheet pdf. Equivalent
Type Designator: PSMN0R9-30ULD
Marking Code: 0D93UL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 300 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 109 nC
trⓘ - Rise Time: 49.8 nS
Cossⓘ - Output Capacitance: 2914 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00087 Ohm
Package: SOT1023A
PSMN0R9-30ULD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSMN0R9-30ULD Datasheet (PDF)
psmn0r9-30uld.pdf
PSMN0R9-30ULDN-channel 30 V, 0.87 m, 300 A logic level MOSFETin SOT1023A enhanced package for UL2595, usingNextPowerS3 Schottky-Plus Technology23 May 2018 Product data sheet1. General descriptionSOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logiclevel gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3portfolio util
psmn0r9-30yld.pdf
PSMN0R9-30YLDN-channel 30 V, 0.87 m logic level MOSFET in LFPAK56using NextPowerS3 Technology11 November 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFE
psmn0r9-25ylc.pdf
PSMN0R9-25YLCN-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 4 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn0r9-25ylc.pdf
PSMN0R9-25YLCN-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 4 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn0r9-25yld.pdf
PSMN0R9-25YLDN-channel 25 V, 0.85 m, 300 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology27 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated w
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: CSD19534KCS | SVD2N60T
History: CSD19534KCS | SVD2N60T
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