PSMN1R0-40SSH Todos los transistores

 

PSMN1R0-40SSH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PSMN1R0-40SSH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 325 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 1578 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.001 Ohm
   Paquete / Cubierta: SOT1235

 Búsqueda de reemplazo de MOSFET PSMN1R0-40SSH

 

Principales características: PSMN1R0-40SSH

 ..1. Size:322K  nxp
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PSMN1R0-40SSH

PSMN1R0-40SSH N-channel 40 V, 1 m , 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology 1 May 2019 Product data sheet 1. General description 325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFET in LFPAK88 package. NextPowerS3 family using Nexperia s unique SchottkyPlus technology delivers high efficiency and low

 4.1. Size:288K  nxp
psmn1r0-40yld.pdf pdf_icon

PSMN1R0-40SSH

PSMN1R0-40YLD N-channel 40 V 1.1 m logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 25 August 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching appli

 4.2. Size:264K  nxp
psmn1r0-40uld.pdf pdf_icon

PSMN1R0-40SSH

PSMN1R0-40ULD N-channel 40 V, 1.1 m , 280 A logic level MOSFET in SOT1023A enhanced package for UL2595, using NextPower- S3 Schottky-Plus technology 23 May 2018 Product data sheet 1. General description SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package using advanced Tre

 4.3. Size:295K  nxp
psmn1r0-40ysh.pdf pdf_icon

PSMN1R0-40SSH

PSMN1R0-40YSH N-channel 40 V, 1 m , 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology 25 April 2019 Product data sheet 1. General description 290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56E package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance

Otros transistores... PSMN018-100ESF , PSMN018-100PSF , PSMN019-100YL , PSMN021-100YL , PSMN025-80YL , PSMN0R9-25YLD , PSMN0R9-30ULD , PSMN1R0-25YLD , 8N60 , PSMN1R0-40ULD , PSMN1R0-40YSH , PSMN1R2-25YLD , PSMN1R5-25MLH , PSMN1R5-40YSD , PSMN1R6-30MLH , PSMN1R7-25YLD , PSMN1R7-40YLD .

History: JMPC20N65BJ | JMPC25N60BJ | JMPC18N50BJ | UPA2718GR

 

 
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