PSMN1R0-40SSH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PSMN1R0-40SSH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 325 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 1578 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.001 Ohm
   Paquete / Cubierta: SOT1235

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PSMN1R0-40SSH Datasheet (PDF)

..1. Size:322K nxp
psmn1r0-40ssh.pdf

PSMN1R0-40SSHN-channel 40 V, 1 m, 325 Amps continuous, standard levelMOSFET in LFPAK88 using NextPowerS3 Technology1 May 2019 Product data sheet1. General description325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFETin LFPAK88 package. NextPowerS3 family using Nexperias unique SchottkyPlus technologydelivers high efficiency and low

4.1. Size:288K nxp
psmn1r0-40yld.pdf

PSMN1R0-40YLDN-channel 40 V 1.1 m logic level MOSFET in LFPAK56 usingNextPower-S3 Schottky-Plus technology25 August 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has beendesigned and qualified for high performance power switching appli

4.2. Size:264K nxp
psmn1r0-40uld.pdf

PSMN1R0-40ULDN-channel 40 V, 1.1 m, 280 A logic level MOSFET inSOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology23 May 2018 Product data sheet1. General descriptionSOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logiclevel gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package usingadvanced Tre

4.3. Size:295K nxp
psmn1r0-40ysh.pdf

PSMN1R0-40YSHN-channel 40 V, 1 m, 290 A standard level MOSFET inLFPAK56E using NextPower-S3 Schottky-Plus technology25 April 2019 Product data sheet1. General description290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56Epackage using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance

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